| 摘要 |
PURPOSE:To improve the responsibility of the electrochromic display device by forming plural electrochromic display picture elements, two thin-film transistors (TR), and one capacitor on a substrate, and using polycrystalline Si formed in the semiconductor layer of a thin-film TR for driving by a beam annealing method. CONSTITUTION:Row electrodes 25 are driven, line by line, and capacitors 23 provided corresponding to picture elements on the lines 25 are applied with a 0 or negative voltage from row electrodes 26 simultaneously through thin-film TRs 21 in an ON state according to coloring/decoloring states of picture elements. Feeding electrodes 27 applies a negative voltage to a counter electrode after the charging/discharging states of the capacitors 23 are determined. Consequently, a TR22 turns on to supply an electron to a picture element 24, and an ion is supplied from an electrolyte side at the same time to color the picture element. The polycrystalline Si obtained by annealing amorphous or fine crystal Si with an electron beam or laser beam is used for the thin-film TR for driving to form a semiconductor layer, improving the responsiveness. |
