| 摘要 |
PURPOSE:To enable the title device to be produced in an easy process by a method wherein the surface layer of the region of forming the light receiving part of a P type HgCdTe compound semiconductor substrate is oxidized, and next an N type light receiving region and an N type low-resistant layer of higher carrier concentration are formed by heat-treating the substrate in an Hg atmosphere. CONSTITUTION:A mask 2 having a window in the region of forming the light receiving part is provided on the P type HgCdTe substrate 1, and the surface layer 3 of the region of forming the light receiving part of the substrate 1 is oxidized. Next, Hg is diffused into the substrate 1 by heat treatment in an Hg vapor atmosphere. An N type region 4 is formed in the substrate 1 by this diffusion treatment, and an N<+> type low-resistant layer 5 is formed by additional diffusion of oxygen from the oxidized surface layer 3. Then, an insulation protection film 6, an N-side electrode 7 and a P-side electrode 8 are formed after the oxidized surface layer 3 is etched away. |
