| 摘要 |
PURPOSE:To reduce the failure of current leakage and hold caused by dispersion of a minute quantity of charge by generating proper internal minute defects in an Si substrate in a heat treatment process for muanufacturing MOS semiconductor elements by determining concentrations of oxygen and carbon in a CZ silicon substrate to be within a specified range. CONSTITUTION:For semiconductor substrate 1, an Si subsrate on which crystal growth is effected by a CZ method with an oxygen concentration of (14-18)X 10<17>atom/cm<3> and an carbon concentration of (0.5-3)X10<16>atom/cm<3>. The substrate is provided with, for example, a field oxide film 2, a diffusion layer (degit line) 3, a polysilicon electrode 4 which becomes a transfer gate for writing and reading of electric signals, a polysilicon electrode 5 which becomes a capacity part for storing a quantity of charge of the electrical signals and an in terlayer insulator 6 thereby forming the dynamic MOS memory using a two- layer polycrystalline silicon. |
