| 摘要 |
PURPOSE:To obtain the semiconductor circuit device difficult of decrease in insulation strength between the source and drain regions even with a micro transistor gate electrode by a method wherein a transistor gate is formed out of an aperture pattern of photo resist. CONSTITUTION:One main surface of a P type single crystal Si substrate 11 is coated with an Si oxide film 12, and next an N type region 13 of low impurity concentration is formed on the surface of the substrate. Then, a PSG film 14 is grown and is thereafter etched in the part turning into the channel region of the transistor in order to open this film 14. The first photo resist 15 is removed. A P type channel region is formed by ion implantation by using the PSG film 14 as a mask. The patterned film 14 is coated with a polycrystalline Si film and then made to have conductivity by phosphorus diffusion. The second photo resist is formed out of the remaining pattern at the time of forming this transistor gate, and the polycrystalline Si film is patterned by being masked with this resist, resulting in the formation of the transistor gate 16. |
