| 摘要 |
PURPOSE:To enable the chemical vapor phase deposition of an insulation film containing phosphorus on the surface of a III-V group compound semicondutor at a temperature of 500 deg.C or lower by reacting both raw material gases introduced in a reaction container, one containing phosphorus and the other containing nitrogen. CONSTITUTION:A raw material gas containing phosphorus and a raw material gas containing nitrogen are inroduced in a reaction container 1, these raw material gases are reacted and an insulating macromolecular film containing (PON)n and (P2O2N3H3)n is chemically vapor-phase-deposited on the surface of a III-V group compound semiconductor 6 containing phosphorus. For example, using a reaction tube 1 made of quartz, ammonia diluted with argon is introduced in the reaction tube 1 from an inlet 3, POCl3 at a room temperature bubbled with argon and diluted with argon is introduced in the reaction tube 1 from an inlet 4 and a macromolecular film containing (PON)n and (P2O2N3H3)n is chemically vapor-phase-deposited on a substrate 6 by heating the InP substrate 6 to 360 deg.C. |
