| 摘要 |
PURPOSE:To improve the efficiency of collection of currents, and to enhance reliability and characteristics by using a transparent conductive film as an antireflection film formed on the beam projection side of a photovoltaic device consisting of a crystal semiconductor and reducing loss by resistance in a surface electrode. CONSTITUTION:Phosphorus is doped into a p type Si substrate 25 having 0.5- 5OMEGAcm resistivity at approximately 900 deg.C through a thermal diffusion method to shape an n type Si layer 24 in 0.2-1.0mum from the surface. A back electrode 26 is vacuum-deposited on the substrate 25 side, and thermally treated at 400- 750 deg.C. Al, etc. are vacuum-deposited by using a metallic mask to form a latticed surface electrode 23. A transparent conductive film 22 functioning as an antireflection film in combination is shaped by employing an oxide of In or Sn. |
