发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve adhesive properties among both of an electrode and a metal for a wiring and an inter-layer insulating film by coating the surface of an Au layer or a metallic layer containing Au with a metallic layer containing either of Mo, W, Ti, Cr or Ni. CONSTITUTION:An Au.Ge alloy layer 31 for an ohmic contact is evaporated onto a GaAs crystal 10, and an Ni layer 32, an Au layer 33 and an Mo layer 34 are evaporated in succession. The GaAs crystal 10 is thermally treated to form the ohmic contact. A phosphorus-doped glass film 40 is applied. A contact hole 140 is processed to one part of the phosphorus-doped glass film 40. The film peeling of the phosphorus-doped glass film 40 and defective accidents regarding the size of processing are prevented by the Mo film 34.
申请公布号 JPS612360(A) 申请公布日期 1986.01.08
申请号 JP19840121713 申请日期 1984.06.15
申请人 HITACHI SEISAKUSHO KK 发明人 MIYAZAKI MASARU;ADAKA SABUROU;MORI MITSUHIRO;KOBAYASHI MASAYOSHI;KOBASHI TAKAHIRO;IMAMURA YOSHINORI
分类号 H01L21/768;H01L21/28;H01L21/3205;H01L23/52;H01L27/06;H01L29/43;H01L29/45;H01L29/80 主分类号 H01L21/768
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