| 摘要 |
PURPOSE:To directly charge a sample gas into a carrier gas at a slight flow rate, by covering a valve seat formed on a silicon wafer with a thin film and by covering this thin film with a plate formed therein with a charge port and a gap. CONSTITUTION:A gas charge control valve is constituted such that a heat welding section 6 in a thin film having about 100mum is bonded to a valve on a valve seat 12 formed in a silicon wafer 1, and a plate 10 is bonded to the film with the bonding surfaces thereof being mated together. Further, the valve seat 12 is composed of a sample gas passage 2, a sample gas charge hole 3 for carrier gas and a valve seat surface 4. The plate 10 is composed of a control gas charge hole 9 for controlling the gas charge gap recess 8 and the flexing section 7 of the thin film 5. The gas charge control valve having the above-mentioned structure, actuates such that the flexing section of the thin film 5 is pressed against the valve seat surface 4 of the valve seat 12 by a high pressure of a control gas, and therefore, checks the inflow of gas. |
