| 摘要 |
PURPOSE:To form a semiconductor memory cell compactly by forming one conduction type single crystal growth layer onto a substrate and a crystallizable insulating film and diffusing a reverse conduction type impurity to one part of the single crystal growth layer. CONSTITUTION:An silicon single crystal growth layer 13 is formed onto a crystallizable insulating film 12 and a semiconductor substrate 1. An silicon single crystal is grown on the insulating film 12 to shape the single crystal growth layer 13. There is a first polycrystalline electrode 5 on the semiconductor substrate 1 through a thin oxide film 6. These oxide film and electrode form a charge storage gate 4. There is a second polycrystalline electrode 8 on the semiconductor substrate 1 and the single crystal growth layer through an oxide film 9. These oxide film and electrode shape a transfer gate 7. An N type impurity diffusion layer is formed while using the second polycrystalline electrode 8 as a mask. The impurity diffusion layer constitutes a bit line 10. |
