| 发明名称 |
Means for alleviating emitter contact stress in bipolar transistors. |
| 摘要 |
<p>An emitter contact structure is disclosed for alleviating forward bias beta degradation in a bipolar transistor. The structure comprises an emitter contact metallurgy stripe (3) which travels over a dielectric insulating layer (9) having an area of increased thickness (10) adjacent to a contact opening (11) between the metallurgy stripe (3) and the emitter (1).</p> |
| 申请公布号 |
EP0166344(A2) |
申请公布日期 |
1986.01.02 |
| 申请号 |
EP19850107449 |
申请日期 |
1985.06.19 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUECKEL, GARY ROBERT;PROKOP, GEORGE STEPHEN |
| 分类号 |
H01L29/73;H01L21/3205;H01L21/331;H01L23/485;H01L23/52;H01L29/417;H01L29/732;(IPC1-7):H01L23/48;H01L29/52 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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