| 摘要 |
PROBLEM TO BE SOLVED: To design an electronic device using an indium oxide thin film, by making not larger than a specific value the half-value width of its rocking curve measured through an X-ray diffraction method to obtain its high orientation quality, and by making not larger than a specific value the root-mean- square root roughness of its surface, and further, by making not smaller than a specific value its carrier mobility. SOLUTION: In an ultrahigh-vacuum vessel for laser ablations, a single-crystal substrate plane (001) of YSZ(yttrium stabilized zirconia) is mounted to heat it at 200-800 deg.C by a lamp heater. Thereafter, an oxygen gas of 1.2×10-3 Pa is introduced into the vessel to project an excimer laser beam on a target made of a high-purity In2O3. Thereby, the In2O3 is so deposited on a substrate opposed to the target and separated by 30 mm from the target as to produce such an indium oxide thin film that the half-value width of its rocking curve measured by an X-ray diffractometer is made not larger than 0.3 deg. to obtain its high orientation quality, and the rms roughness of its surface is not larger than 10 nm, and further, its carier mobility is made not smaller than 70 cm2/Vs.
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