| 摘要 |
manufacture of semiconductor materials, possibly production of initial polycrystalline silicone by vapor deposition or by deposition of gas-vapor phase of silanes onto heated substrates. SUBSTANCE: method comprises steps of placing flat substrate in chamber, feeding vapor or gas-vapor flow along surface of flat substrate, heating flat substrate by passing electric current; depositing onto flat substrate silicone from vapor or gas-vapor mixture, extracting flat substrate out of chamber for its subsequent treatment. Flat substrate is made of material with specific resistance in range from 1x10-3 Ohm/cm up to 50 Ohm/cm. Then silicone is removed from flat substrate by cutting off. Chamber includes housing, holders for flat substrates arranged in housing with possibility for placing substrates in horizontal rows; nozzle for supplying vapor or gas-vapor mixture between rows; union for discharging vapor or gas-vapor mixture. Holders are provided with electric current leads. Nozzles are mounted at side of housing wall turned to long side of flat substrate. There are at least two nozzles for each interval between horizontal rows of substrates. EFFECT: enhanced efficiency, lowered cost of process. 14 cl, 4 dwg, 6 ex
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