发明名称 UN METODO DE GALVANOPLASTIA DE UN MATERIAL SOBRE UNA PRIME- RA SUPERFICIE DE UN DISPOSITIVO SEMICONDUCTOR
摘要 <p>A non-destructive method of electro-coating a preselected pattern of electrically insulating or conducting material onto a semiconductor device which includes a photoresponsive junction. The method includes the step of illuminating the semiconductor device prior to initiating the flowing of electro-coating current therethrough. The method has particular utility in providing electroplated grid patterns and connections on large area photovoltaic cells. Also disclosed is the use of current generated by a photovoltaic cell to effect the electro-coating thereof.</p>
申请公布号 ES540442(D0) 申请公布日期 1986.01.01
申请号 ES19420005404 申请日期 1985.02.15
申请人 ENERGY CONVERSION DEVICES,INC. 发明人
分类号 H01L31/04;C25D5/02;H01L21/288;(IPC1-7):H01L31/18 主分类号 H01L31/04
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