发明名称 Method of measuring electric resistance of thin metallic layers manufactured under the influence of a plasma
摘要 A method of measuring the electrical resistance of thin metallic films manufactured under the influence of a plasma. The measurement proceeds by means of a direct current resistance measurement according to the principle of a two point or four point measuring method. The electrical resistance is determined either in the case of at least one measuring or test current, and the voltage connected to the measuring contacts is measured when no measuring or test current is sent through the film, or the electrical resistance is determined in the case of at least two different measuring or test currents of known magnitudes. The measuring methods are applied in the case of manufacture of metallic layers in semiconductor technology, in particular also for the measurement of the ion current injected in the film by the plasma as well as for the determination of variations in the coating rate.
申请公布号 US4562089(A) 申请公布日期 1985.12.31
申请号 US19840663760 申请日期 1984.10.22
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HIEBER, KONRAD;MAYER, NORBERT
分类号 C23C14/34;C23C14/54;G01B7/06;G01N27/04;G01R27/02;H01C17/12;(IPC1-7):C23C11/02 主分类号 C23C14/34
代理机构 代理人
主权项
地址