发明名称 METHOD FOR PRODUCING SEMICONDUCTOR GRADE SILICON
摘要 A slim rod is heated to 1000 - 1300≦̸C in a chem. vapor deposition chamber. A gas mixt. and silicon halide-hydrogen reaction gases are thermally decompd. by contact with the slim rod. The addnl. silane increases the silicon decompn. rate, but its amount is limited to prevent free silicon particle or silicon halide polymer from attaching to the walls.
申请公布号 KR850001945(B1) 申请公布日期 1985.12.31
申请号 KR19810002713 申请日期 1981.07.27
申请人 MONSANTO CO. 发明人 GUTSCHE, HENRY W.
分类号 C01B33/02;C01B33/035;C23C16/24;C30B25/00;C30B29/06;C30B29/60;H01L21/205;(IPC1-7):C30B25/00 主分类号 C01B33/02
代理机构 代理人
主权项
地址