| 摘要 |
PURPOSE: A method for etching a material layer on semiconductor wafer using a surface wave plasma etching apparatus is provided to reduce a preheating time of a glass substrate, reduces a damage of a glass substrate by not using an etching gas, and prevents a polymer generation on the glass substrate. CONSTITUTION: A plasma etching apparatus includes an insulation plate for generating a surface wave by a microwave and a glass plate for transmitting a surface wave to a lower part of the insulation plate. In a method for etching a material layer on a semiconductor wafer loaded in the reaction chamber, surface plasma such as argon or xenon is generated. The surface plasma includes a high ion density and a big-mass ion, and thus quickly preheats the glass substrate. The glass plate is heated and then the material layer is etched. Thereby, the method for etching a material layer on semiconductor wafer using a surface wave plasma etching apparatus reduces a preheating time of a glass substrate, reduces a damage of a glass substrate by not using an etching gas, and prevents a polymer generation on the glass substrate.
|
