METHOD FOR FORMING CHAGE STORGE NODE OF CAPACITOR

摘要

PURPOSE: A method for forming a charge storge node of a capacitor is to increase the capacitance using a TaON thin film. CONSTITUTION: The charge electrode node(30) is formed with a doped silicon layer and an oxide layer(40) is formed on the entire structure by using O3. Afer that, an SiON layer(50) is formed by using NH3 reaction gas in a plasma atmosphere. A TaON thin layer(60) is deposited on the SiON layer(50) by a surface chemical reaction. Therefore, achieving a desired capacitance.