Method of growth of compound semiconductor

摘要

A method for the growth of a compound semiconductor comprises growing on a silicon substrate a polycrystalline layer of a desired Group III-V compound semiconductor or a crystal layer of the desired Group III-V compound semiconductor having inferior crystallinity, growing on the formed layer at least one layer of the same semiconductor as the desired Group III-V compound semiconductor and at least one layer of a Group III-V compound semiconductor having a lattice constant approximating the lattice constant of the desired Group III-V compound semiconductor, which layers are alternately disposed, and growing on the alternately disposed layers a layer of the desired Group III-V compound semiconductor.