| 摘要 |
PURPOSE:In the titled process where a seed crystal is brought into contact with the melt of a semiconductor in groups III-V in a crucible contained in a vessel and pulled up, a hollow tube is inserted to the interface between the melts between the starting materials and the capsulating material to remove bubbles whereby a single crystal of small defects is obtained. CONSTITUTION:High-purity GaAs melt 5 and transparent capsule melt of boron oxide are in a carbon crucible 2 lined with PBN. At this state, a number of bubbles are formed on the interface between both melts 5, 3. A hollow tube 1 is inserted so that its end reaches bubbles. The hollow part is slightly redudced in pressure and the bubble on the end of the tube is readily removed. Then, the single crystal of GaAs is pulled up. Thus, single crystals of reduced defects are obtained in high yield. |
