Semiconductor device having an increased breakdown voltage.

摘要

@ A semiconductor device having a surface zone (2) which forms a planar pn junction (5) with the surrounding substrate (1), this pn junction being biased in operation in the reverse direction. In order to increase the breakdown voltage; one or more floating zones (3) are located beside the pn junction within the range of the depletion zone, which also form planar pn junctions (6) with the substrate. According to the invention, the floating zones (3) have an overall doping of at least 3.1011 and at most 5.1012 atoms/cm2, as a result of which they are depleted for a substantial part at a high reverse voltage.