| 摘要 |
PURPOSE:To make dispersion in sensor area for each picture element small and to prevent destruction of a photoelectric conversion film by constituting a title sensor so that a beltlike common electrode is not opposed to corner parts of plural individual electrodes and not using the corner parts of individual electrode as sensors. CONSTITUTION:An Al film is formed on a glss substrate 1 by electron beam vapor deposition to a thickness of 3,000Angstrom . A sensor section and its electrode pattern are formed by photolithography to obtain a lower individual electrode 2. The longitudinal width W of the electrode 2 is made to 1.5 times lateral width D. A film of hydrogenated amorphous silicon is formed by a glow discharge process to form a photoconductive conversion film 3. Further, a beltlike common electrode 4, narrower than the width W of a lower individual electrode, is provided in beltlike form not to oppose to right above the corner part of the lower individual electrode 2. By such constitution, the part that does not oppose to the common electrode 4 of the lower individual electrode 2 does not work as a sensor.
|
