发明名称 |
METHOD OF FORMING A NUMBER OF SOLDER LAYERS ON A SEMICONDUCTOR WAFER |
摘要 |
<p>A method of forming a number of discrete solder layers on a semiconductor wafer of a large area. A number of regions which are easy to be wetted with solder are formed on one of the major surfaces of the wafer. A solder foil is positioned on the one major surface and a plate-like jig including a plate and projections formed on one surface thereof is disposed on the solder foil with the projections facing the latter. By heating the stacked assembly at a sufficiently high temperature for the solder foil to be molten, a number of the discrete solder layers having a uniform thickness are formed on the semiconductor wafer.</p> |
申请公布号 |
EP0085974(A3) |
申请公布日期 |
1985.12.27 |
申请号 |
EP19830101135 |
申请日期 |
1983.02.07 |
申请人 |
HITACHI, LTD. |
发明人 |
KUSHIMA, TADAO;GOODA, MASAHIRO;SOGA, TASAO;YAMAMOTO, TOSHITAKA |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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