| 摘要 |
The invention relates to a bidirectional protection device, with no gate electrode, and which is triggered in the event of an overvoltage by the avalanching of a PN junction between a P-type gate region (GA1) and an N-type central region (CE1). To improve the uniformity and rate of firing of this component having two head-to-tail thyristors (TH1, TH2), a passivated middle furrow (SM1, SM2) is provided on each face, separating the thyristor TH1 from the thyristor TH2. The latter then enables diverse variants to be implemented which favour the improvement of the firing of the device in the presence of an overvoltage. <IMAGE>
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