发明名称 GROWING METHOD FOR SINGLE CRYSTAL
摘要 PURPOSE:The vessel of double-wall structure is filled with a gas mixture of an element in group V in the gas form and an inert gas and the melt of the starting substance is capsuled with a liquid sealer to facilitate pressure control whereby a single crystal is pulled up with a seed crystal form the melt. CONSTITUTION:In the inside chamber, a crucible 4 containing a liquid sealer 21 and starting materials for polycrystals is set on the supporting shaft 3 and a seed crystal 6 is fixed to the end of the pulling-up shaft 2, further, an element in group V 12 is placed in the inside chamber 1. The inside chamber 1 and the outside chamber 15 are filled with an inert gas so that the pressure inside becomes equal to each other. Then, the 3rd heater 19 is heated to melt the sealing agent 12 into liquid to cover the solid start materials, then the starting materials are melted into a liquid. Then, the second heater is used to vaporize a part of the element in group V to fill the inside chamber 1 to increase the gas pressure Q0 so that the pressure is kept higher than the dissociation pressure Qd of the element. The pressure in the inner chamber 1 is made equal to or higher than that in outside chamber 15. Under such conditions, the seed crystal is dipped in the melt 5 and the single crystal 7 of an element in group III-V or group II- VIis pulled up, as the crucible 4 and the seed crystal 6 are allowed to rotate relatively.
申请公布号 JPS60264390(A) 申请公布日期 1985.12.27
申请号 JP19840117845 申请日期 1984.06.08
申请人 SUMITOMO DENKI KOGYO KK 发明人 TADA KOUJI;TATSUMI MASAMI;KOTANI TOSHIHIRO;SAWADA SHINICHI
分类号 C30B15/10;C30B27/02;C30B29/40;C30B29/48;H01L21/02;H01L21/208 主分类号 C30B15/10
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