| 摘要 |
In a double level polysilicon semiconductor structure, eg for a static RAM cell, a silicided outer region (42) of one portion (40) of the second level polysilicon layer serves as a conductive bus while an adjacent portion (34) serves as a resistor. The silicided outer region (42) is formed by depositing a silicide-forming metal on the one portion (40) of the second level polysilicon layer and annealing the structure. The second level polysilicon layer is undoped or only lightly doped. |
