发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To form a high quality of org. matter by a simple method by placing org. matter as a vapor deposition source close to a substrate so that they confront each other, heating the org. matter under ordinary pressure, and depositing the resulting vapor on the substrate. CONSTITUTION:A boat 1 for a vapor deposition source contg. org. matter as a material 2 to be vapor-deposited is brought as close as possible to a substrate 3. The material 2 is evaporated by heating with an electric heater or the like under ordinary pressure, and the resulting vapor is deposited on the substrate 3 to form a thin film 4. Since the material 2 is brought close to the substrate 3, the substrate 3 is prevented from being excessively heated by providing a cooling mechanism. Fluorescein, rhodamine B, phenolphthalein or the like can be effectively used as the material 2.
申请公布号 JPS60262971(A) 申请公布日期 1985.12.26
申请号 JP19840117868 申请日期 1984.06.08
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 OIKAWA SHIGERU;MORINAKA AKIRA
分类号 C23C14/50;C23C14/12 主分类号 C23C14/50
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