| 摘要 |
PURPOSE:To manufacture various types of ICs with facility by a method wherein undoped semiconductor layers are epitaxially grown to be implanted with impurity ions as required so that various types of circuit elements may be built with facility and reliability in common epitaxial layers. CONSTITUTION:On the primary surface of an undoped semi-insulating, single- crystal substrate So, a first semiconductor layer 11, second semiconductor layer 12, third semiconductor layer 13 are epitaxially grown, in that order. Into the entire surface of the third semiconductor layer 13, ions of an impurity of one conductivity type, for example, Si or Se that are n type impurities, are driven. The third semiconductor layer 13 is subjected to etching, whereby all is removed with the exception of a portion to be occupied by the gate of a DH-MIS-FET that is the ultimate product. Next, with the retained portion of the third semiconductor layer 13 acting as a mask, ions of Si or Se that is same as the impurity inplanted into the third semiconductor layer 13, are inplanted into the interface between the first semiconductor layer 11 and the second semiconductor 12, for the formation of source/drain regions 4, 5. Annealing follows for the activation of the implaned ions. |
