| 摘要 |
PURPOSE:To enable to perform a selective annealing on the surface only of a substrate using an ion irradiation by a method wherein the substrate having a low degree of heat tolerance is used by cooling the substrate to be annealed with the cooling liquid such as running water and the like so that the substrate is maintained at low temperature. CONSTITUTION:An inflow hole 26 and an outflor hole 27 are provided on an electrode having a magnet 24 and a pole piece 25 built-in, and cooling water is poured. As a result, an annealing device with which a selective annealing can be performed on the surface only of a substrate 23 in a short period of time and the temperature rise of the entire substrate can be suppressed, is obtained. For example, a semiconductor thin film of 0.1-5mum such as Si, Ge, CdTe, Te, GaAs, InSb and the like is formed on the Pyrex substrate of 0.2-1.0mm., and a sufficient annealing can be performed thereon in the state wherein the temperature rise of the substrate is suppressed. The thickness of the region on which the annealing can be performed is 10-15mum, for example, and the time of said annealing of 2-3sec and/or several tens of seconds is considered suitable. |
