| 摘要 |
PURPOSE:To obtain photovoltage having high efficiency by bringing the forbidden band width of each layer and the energy values of valence bodies or conductors among several layer so as to satisfy specific conditions in a PIN junction semiconductor device. CONSTITUTION:The PIN junctioi semiconductor device is formed in a PIN homo-junction semiconductor device or a PIN hetero-junction semiconductor device, at least a P layer or an N layer therein consists of an amorphous semiconductor containing an amorphous or crystalline layer containing Si and an I layer therein is composed of an amorphous semiconductor layer containing Si. The next relationship must hold among each PIN layer. That is, the forbidden band width of the P layer or N layer on the beam projection side must be made larger than that of the I layer by 0.1eV or more and a difference between the energy of valence bnads between the P layer and the I layer and a difference between the energy of conductors between the I layer and the N layer be equalized substantially. Accordingly, the semiconductor device through which photovoltage having high efficiency is generated without the discrimination of a hetero- junction or a homo-junction can be obtained. |
