| 摘要 |
PURPOSE:To easily manufacture a high frequency high output field effect transistor by regulating gate electrode length with an insulator formed at the side wall of stepped portion at the surface of semiconductor substrate. CONSTITUTION:A recessed portion 12 is formed on the one main surface of an n type GaAs substrate 11. An insulating film 14 is deposited in the predetermined thickness on the one main surface including the recessed portion 12. Thereafter, the entire surface of insulating film 14 is etched by the anisotropic etching method and the insulating film 14 is left only at the side wall in the recessed portion 12. The length between insulating layers 14 formed at both side walls becomes a gate length. A Schottky gate electrode 14 is formed by depositing the Schottky metal to a channel region 10c facing within the recessed portion 12. The source electrode 16 and drain electrode 17 are formed by ohmic deposition respectively on the main surfaces of substrate in both sides of Schottky gate electrode 15, namely on the source region 10s and drain region 10d. |
