| 摘要 |
PURPOSE:To increase maximum transfer charges largely by forming a transfer channel to a semiconductor substrate, the surface thereof has irregular structure. CONSTITUTION:Transfer electrodes 7, 8 consisting of n type polycrystalline Si are formed by periodically shaping recessed sections to the surface of a p type Si substrate 5. With a CCD having such structure, signal charges are transferred by applying external pulse voltage to the electrodes 7 and 8. However, the effective areas, storage capacitance, of MOS diodes formed by the electrodes 7 or 8 determining the maximum quantity of transfer charges and Si dioxide 6 and the substrate 5 are increased largely by structure in which the recessed sections are shaped periodically to the surface of the substrate 5. In this instance, the capacitance of the electrodes 7 and capacitance by the electrodes 8 are equalized, but plane-like occupying areas on transfer channels take the ratio of approximately 2:1. Accordingly, the maximum quantity of transfer charges is increased largely. |
