| 摘要 |
PURPOSE:To increase the gains of an element, and to improve stability by interposing a resistor having a fixed value when a shielding plate reducing feedback capacitance between an input and an output to a grounding electrode. CONSTITUTION:A gate 3 is formed to one main surface of a semiconductor substrate 1 as a drain through a gate insulating film 2, and a p type base and an n<+> type source 5 are shaped. Gate and source metallic electrodes 8, 9 are formed onto a field oxide film 6 and an oxide film 7 shaped to the substrate 1, and a shielding plate 12 is buried to the lower section of the electrode 8. The shielding plate 12 is connected to the electrode 9 by a metallic electrode 14 through a resistor 13. The product of the ratio of feedback capacitance Cgd to capacitance Cish between a gate and the shielding plate 12 and the ratio of the capacitance Cgd to capacitance Cosh between the drain 1 and the shielding plate 13 is set to the product of the resistor 13 Rsh and the mutual conductance of an element approximately equally at that time, thus fixing input conductance at a fixed value which does not depend upon load. Accordingly, stability is not varied even on the variation of load. |
