| 摘要 |
PURPOSE:To prevent a latch-up phenomenon and to utilize an area required for a unit element block effectively, by providing regions, which connect a semiconductor substrate or a well and a wiring, to which a specified voltage is applied, in the inside of a unit element block. CONSTITUTION:Regions 10A, 10B, 16A, 16B and 17, which electrically connect a semiconductor substrate 7 or a well region 8 and wirings 6, to which a specified voltage is applied, are provided in the inside of a unit element block 4. Thus the specified potential can be applied to every unit element block 4. Therefore, unnecessary fluctuation of the potential in the substrate 7 or the well region 8 can be suppressed, and the latch-up phenomenon by a parasitic bipolar transistor can be prevented. Since connecting blocks are not required, the degree of integration can be improved. |
