摘要 |
PURPOSE:To eliminate the effect of the clouding of a quartz window, and to prevent the reduction of the growth rate of a film by supplying a gas supply pipe on the quartz window side with a mixed gas at a composition ratio having the slow growth rate of the film. CONSTITUTION:A substrate 6 is mounted into a reaction vessel 1. A quartz window 3 is formed on one side of the vessel 1, and an ultraviolet lamp 2 is fitted on the outside of the quartz window 3. Two gas supply pipes 4, 5 are installed into the vessel 1. Wafers 7 are placed onto the substrate 6, and the lamp 2 is lit. The supply pipe 4 is supplied with a mixed gas at a composition ratio having the slow growth rate of a film, and the supply pipe 5 is supplied with a mixed gas brought to an optimum composition ratio on the substrate 6. Accordingly, the effect of the clouding of the window 3 is eliminated, and the reduction or the growth rate of the film is prevented. |