| 摘要 |
PURPOSE:To improve the yield of a change into a single crystal up to 100% by also bringing a cap layer into contact with a side wall formed to one part of an insulating layer on the bottom of an island and promoting crystallization in the recrystallization process of the island toward the outside from the center of the island. CONSTITUTION:A second insulating film 6a different from an insulator layer 1 is formed onto the insulator layer 1 and a nonsingle crystal silicon film 2a onto the insulating film 6a. The silicon film 2a and the insulating film 6a are patterned to shape an island 2, a bottom thereof has the insulating film 6a. A separation cap layer 3b and a cap layer 4 are formed onto the island 2 and a side wall in succession. The cap layer 4 is irradisted by energy beams, and the island 2 is recrystallized by heat flowing through the island 2 through the cap layer 3b from the cap layer 4. Accordingly, the yield of a change into a single crystal is improved up to 100%. |
