| 摘要 |
PURPOSE:To form a semiconductor laser device, which is operated in a lateral basic mode by one crystal growth, by providing a stripe in the direction of an inverted mesa shape on a substrate and multiple-layer films having a double heterogeneous structure, which is formed by a growing method under a thermal unbalanced state. CONSTITUTION:On an n-GaAs semiconductor substrate 9, a region, which is higher than other parts, is formed in an inverted trapezoidal stripe shape in the direction of (110). Thereafter a Zn diffused layer 10 is provided. Then an n- Ga0.55Al0.45As clad layer 11, a GaAlAs active layer 12, a p-Ga0.55Al0.45As clad layer 13 and a cap layer 15 are sequentially laminated on both sides. In this constitution, a current flows only in the stripe because of the Zn diffused layer 10 held by the substrate 9 and the clad layer 11 or the substrate and the reverse conducting type formed layers. Since the growing speed of the crystal at a stepped part is slow, the active layer 12 at the stepped part is thinly grown. Light absorption by the active layer, which is not excited, does not occur. Leakage of carriers to the outside of the stripe becomes small. |
