发明名称 |
High density, electrically erasable, floating gate memory cell |
摘要 |
An electrically erasable, programmable memory cell array of the floating gate type is made by a process which allows an erase window for the first level polysilicon floating gate to be positioned beneath a third level poly erase line, while maintaining a small cell size. The erase window is not beneath the second level poly control gate, so degrading of the stored charge by the read mechanism is minimized.
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申请公布号 |
US4561004(A) |
申请公布日期 |
1985.12.24 |
申请号 |
US19820353304 |
申请日期 |
1982.03.01 |
申请人 |
TEXAS INSTRUMENTS |
发明人 |
KUO, CHANG-KIANG;TSAUR, SHYH-CHANG |
分类号 |
H01L21/8247;H01L23/522;H01L29/788;(IPC1-7):H01L29/78;H01L27/02;H01L29/04;G11C11/40 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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