| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of improving the processing size precision and film quality of a passivation film. SOLUTION: The manufacturing method includes a process for forming wiring 2 on a semiconductor substrate 1 forming the semiconductor device, a process for forming the passivation film 3 on the semiconductor substrate 1 including the wiring 2, a process for forming a polyimide film 4 as a buffer coat film on the passivation film 3, a process for patterning the polyimide film 4, a process for etching the passivation film 3 by making the patterned polyimide film 4 a mask, a process for removing by ashing treating a hardened decomposition layer 4B formed on the surface of the polyimide film 4 by etching, and a process for performing curing making the polyimide film 4 imidic after ashing treating. |
