| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element and a magnetoresistance effect type storage element for improving selectivity and output signals by controlling an application bias. SOLUTION: Two resistance elements 70 and 71 are connected in series, and a magnetoresistance element is used at least for one of them. When the magnetoresistance element is to be used for both of them, reluctance can be controlled independently, the non-magnetic body of the first magnetoresistance element is set to an electric insulator and that of the second magnetoresistance element is set to a conductor, thus operating the first magnetoresistance element as a bias control element, controlling the characteristics of the first magnetoresistance element, and controlling voltage applied to the storage element. Also, when the other is composed as a varistor-type element, bias from the non-selected storage element is inhibited, thus improving the selectivity of the storage element.</p> |
