| 摘要 |
PURPOSE:To prevent the variation of an ion implantation region due to the deformation of the overhanging section of a photo-resist on ion implantation by burying a coating material to a side etching section generated when etching an insulating film. CONSTITUTION:An insulating film 2 on a semiconductor substrate 1 is etched while using a photo-resist 3 as a mask. Sections, from which the insulating film 2 is removed in response to the bored windows 4 of the photo-resist 3 and the side etching sections 10 of the insulating film 2 are buried by applying a coating material 9 on the whole surface under the state in which the photo-resist 3 is left. The coating material 9 is removed uniformly through directional plasma dry etching 11. Consequently, the coating materials 9 are left only in the side etching sections 10. The deformation of the overhanging sections 8 of the photo-resist on the implantation of ions 6 can be prevented by the presence of the coating materials 9. |
