| 摘要 |
PURPOSE:To increase the bias magnetic field margin by specifying the pattern width of a corner pattern constituting a replicate gate so as to prevent transfer error of a magnetic bubble memory element from being caused. CONSTITUTION:The pattern width of corner patterns 12b, 12c... constituting the replicate gate of minor loops 1a, 1b... together with corner patterns 11a, 11b... is selected as <=1.25mum. Thus, the attracting pole generated in the direction of rotating magnetic field is weakened, generation of transfer malfunction of the magnetic bubble memory element is prevented and the bias magnetic field margin is increased. |
