| 摘要 |
PURPOSE:To form a pattern with high sensitivity, a high shape factor and high resistance to dry etching by using a material contg. a specified polymer as a pattern forming material. CONSTITUTION:A layer of a pattern forming material represented by the formula (where each of R, R' and R'' is an alkyl group, an aromatic group or a substituted aromatic group, and each of l, m and n is a positive integer) is formed on an org. polymer layer provided on a substrate, cross-linked by heating, and irradiated with high energy beams through a pattern. Only the irradiated part is removed by dissolution in a solvent for development, and the part of the org. polymer not covered with the pattern forming material is removed by dry etching with oxygen to form a pattern. Since the pattern forming material represented by the formula contains epoxy groups, it is cross-linked by heating to control the solubility, so the sensitivity is increased. Since the material contains silicon, it has high resistance to O2 plasma and can be used as the upper resist of a two-layered resist. Since an aromatic polymer can be used as the lower resist of the two-layered resist, the resulting pattern has high resistance to dry etching for working a substrate. The lower layer is made thick to flatten the surface of the substrate, so the upper layer can be coated thinly and uniformly, and the resolution can be increased. |
