| 摘要 |
PURPOSE:To obtain an inexpensive semiconductor MOS memory, which is hard to cause software errors, by using a resin, whose main component is polyimide, which can readily form a film and is resistant to alpha rays, as the insulating film in the MOS region of the semiconductor MOS memory. CONSTITUTION:A p type source 2 and a drain 3 are formed in an n type silicon substrate 1. A gate oxide film 4 having a thickness of 20Angstrom and a polyimide silicon resin 5 having a thickness of 3,000Angstrom are formed at a gate part of a MOSFET. The gate oxide film 4 is hardened by ordinary thermal oxidation and formed. As for the polyimide silicon resin 5, dilluted resin is applied by a spinner, then the resin is hardened and formed. Source, drain and gate electrodes 6, 7 and 8 are formed by the evaporation of aluminum. |
