| 摘要 |
PURPOSE:To impart the n type conductivity with small resistivity to good-quality crystal of zinc sulfide selenide which is epitaxially grown by doping metal of group III which becomes a donner impurity for the zinc sulfide selenide by solid phase diffusion. CONSTITUTION:The crystal of zinc sulfide selenide is grown on a semiconductor crystal substrate and metal of group III or a laminated film of zinc and the metal of column III is deposited on a surface of the crystal followed by heat treatment. On a substrate of GaP crystal 5, for example, ZnS crystal 6 doped with Al is epitaxially grown by reduced-pressure MOCVD using dimethyl zinc, hydrogen sulfide and trimethyl aluminum as a material gas. An Al film 7 is vapor- deposited on the surface. After heat treatment in Ar atmosphere, a deposit on the surface of ZnS crystal layer is removed by aqueous sodium hydroxide. The good-quality crystal of zinc sulfide selenide can be obtained and if a luminous element having MIS structure is formed, blue light emission by SA light emission can be obtained. |
