发明名称 LEAD FOR CERAMIC PACKAGE IC
摘要 PURPOSE:To eliminate the damage of ceramic substrates, and to improve the strength, conductivity, and thermal conductivity after brazing, by using Cu containing a specific amount of Ni, Si, Zn, Sn, and Cr. CONSTITUTION:As the material of the lead for a ceramic package IC, substance containing Ni 1.0-5.0wt%, Si 0.2-1.5wt%, Zn 0.05-5.0wt%, Sn 0.1-2.0wt%, and Cr 0.02-0.5wt% and made of Cu in the remaining and inevitable impurities is used. Ni and Si improve the strength; however, an excess in Ni content above 5.0wt% deteriorates the conductivity, and an excess in Si content above 1.5wt% deteriorates the hot-workability. Zn improves the thermal exfoliation-resistance of a plated layer, but an excess in its content above 5.0wt% deteriorates the solderability. Sn improves the strength and the elongation, but an excess in its content above 2.0wt% decreases the conductivity. A Cr content of less than 0.002wt% shows a small effect in improvement of the heat workability, and its content more than 0.5wt% causes the oxidation of the molten metal and deteriorates the castability.
申请公布号 JPS60258945(A) 申请公布日期 1985.12.20
申请号 JP19840115298 申请日期 1984.06.05
申请人 KOBE SEIKOSHO KK 发明人 MIYATOU MOTOHISA;SAITOU AKITOSHI
分类号 C22C9/00;H01L23/48;H01L23/498 主分类号 C22C9/00
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