发明名称 |
Method for manufacturing single-crystal-silicon wafers |
摘要 |
According to the present invention, there are provided a method for producing a silicon single crystal wafer which contains oxygen induced defects by subjecting a silicon single crystal wafer containing interstitial oxygen to a heat treatment wherein the heat treatment includes at least a step of performing a heat treatment using a resistance-heating type heat treatment furnace and a step of performing a heat treatment using a rapid heating and rapid cooling apparatus, and a silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wafer which has a DZ layer of higher quality compared with a conventional wafer in a wafer surface layer part and has oxygen induced defects at a sufficient density in a bulk part and the silicon single crystal wafer.
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申请公布号 |
US6805743(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20030333970 |
申请日期 |
2003.01.24 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KOBAYASHI NORIHIRO;TAMATSUKA MASARO;NAGOYA TAKATOSHI |
分类号 |
C30B33/00;H01L21/26;H01L21/322;H01L21/324;(IPC1-7):C30B25/02;C30B25/04 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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