| 摘要 |
PURPOSE:To analyze a composition with high resolution and in a short time with regard to a multi-layer structure of a thin film by removing the surface of a sample to some depth by a high speed sputter ion gun, and subsequently, analyzing it in the depth direction by a low speed spatter ion gun and an Auger electron analyzer. CONSTITUTION:A high speed sputter ion gun 1 and a low speed sputter ion gun 2 are directed to a sample 5. First of all, the sample 5 is etched by the high speed sputter ion gun 1, and in this case, a mask 6 is placed on the sample 5, and a step difference by the sputter is formed. Subsequently, the step difference is observed at times by an interference microscope 3, and the sputter is executed up to some depth. Next, when it has reached a desired depth, it is switched to the low speed sputter ion gun 2 and the sputter is executed, and a composition of the depth direction is analyzed by an Auger electron analyzer 4. Accordingly, a layer whose measurement is not desired is brought to high speed sputter, and a layer whose measurement is desired is brought to a low speed sputter, therefore, a multi-layer structure of a deep layer can be measured in a short time and with high resolution. |
