| 摘要 |
PURPOSE:To produce a semiconductor device with a terminal, which can respond to wide applications, by inserting a transistor circuit consisting of first and second transistors among output signals from input-output terminals and a gate in a transistor at the last step. CONSTITUTION:One terminal of a source or a drain in an N channel depletion transistor 5 as a first transistor is connected to a gate in a transistor 2, and the other terminal is connected to an output signal. The drain side of an N channel enhancement transistor 4 as a second transistor is connected at a node between the gate in the transistor 2 and the transistor 5, and a transistor circuit 6 is constituted by the first and second transistors. Accordingly, a terminal 1 can be operated as a terminal exclusive for an input or an input-output combining terminal or a terminal exclusive for an output only by changing over the first and second transistors 5, 4 to a depletion type or an enhancement type in a depletion process, and an integrated circuit with terminals having different applications can be obtained easily. |
