| 摘要 |
PURPOSE:To enable a stable plasma state to be maintained with a reduced discharge power, by providing an acicular metal assembly on one of the opposed electrodes. CONSTITUTION:A high-frequency side electrode 4 has an acicular electrode structure. With such an acicular electrode having an acicular metal assembly 9, the electric field density at the electrode section is larger than that in the case of a conventional parallel planar electrode pair of simple electrodes 3, 4, so that an electric discharge takes place easily. Accordingly, it is possible to lower the required minimum discharge power, and a stable plasma can be generated and maintained with a reduced discharge power. As a result, the formation of an a-Si film can conveniently be carried out. Since doping can be effected with a lowered power, it is possible to reduce the damage to a substrate 6 by electrons in the plasma. In addition, since the film formation speed is not very high but relatively low, it becomes possible to form a film having excellent quality and less distortion. |
