| 摘要 |
<p>PURPOSE:To alleviate the concentration of stress on a substrate by a method wherein, when a metal post electrode is pressure-welded on both front and back sides of a semiconductor substrate through a temperature compensating plate, the metal post electrode is formed into a two-ply structure, and the inner post electrode on the substrate side is formed in the size larger than that of the jointed part with the outer post electrode, thereby enabling to elastically deform the protruded part of the inner post electrode when pressure is applied. CONSTITUTION:Temperature compensation plates 12 and 13, having a cathode side and an anode side formed in symmetrical structure, are coated on both front and back sides of a semiconductor substrate 11 of thyristor and the like, and metal post electrodes of symmetrical structure is installed thereon. According to this constitution, these post electrodes are constructed in two-plate superposed type, and the size of the inner post electrodes 14 and 15 is made larger than that of the jointed part of the outer post electrodes 16 and 17. As a result, the outer protruded parts of the inner post electrodes 14 and 15 are elastically deformed when the post electrodes are pressure-welded, and the stress concentration on the substrate 11 is alleviated, thereby enabling to stabilize the electrical characteristics of the semiconductor device.</p> |
